EENG 3510 - Electronics I (Devices and Materials)

3 hours

Introduction to contemporary electronic devices, terminal characteristics of active semiconductor devices, and models of the BJT and MOSFET in cutoff and saturation region are introduced. Incremental and DC models of junction diodes, bipolar transistors (BJTs), and metal-oxide semiconductor field effect transistors (MOSFETs) are studied to design single and multistage amplifiers.

Prerequisite(s): EENG 2610 (and EENG 2611 for Electrical Engineering students), each with a grade of C or better.

Corequisite(s): EENG 3511 (which must be completed with a grade of C or better) for Electrical Engineering students.